CHAPTER 11
THYRISTORS
1. It is like the four-layer diode but with the added gate connection
SCR
2. This is the maximum continuous anode current that the device can withstand in the conduction state under specifies conditions.
Average forward current
3. What bilateral thyristor functions basically like two parallel SCRs turned in opposite directions with a common gate terminal?
Triac
4. ____________ does not belong to the thyristor family because it does not have a four-layer type of construction.
UJT
5. It can be used a trigger device for SCRs and triacs.
UJT
6. It is a type of three-terminal thyristor that is triggered into conduction when the voltage at the anode exceeds the voltage at the gate.
PUT
7. A region of forward bias in which the device has a very high forward resistance and is in the off state
Forward-blocking region
8. A method for turning-off the SCR that basically requires momentarily forcing current through the SCR in the direction opposite to the forward conduction
Forced commutation
9. The value of gate current necessary to switch the SCR from the forward-blocking region to the forward-conduction region under specified conditions.
Gate Trigger Current
10. A four-layer semiconductor device that operates essentially as does the conventional SCR except that it can also be light-triggered.
LASCR
11. Functions basically like two parallel 4- layer diodes turned in opposite directions.
Diac
12. A diac with gate terminal
Triac
13. A four-terminal thyristor that has two gate terminals that are used t trigger the device on and off
Silicon Controlled Device (SCS)
14. A type of three-terminal thyristor that is triggered into conduction when the voltage at the anode exceeds the voltage at the gate.
Programmable Unijunction Transistor (PUT)
15. The characteristic of a UJT that determines its turn-on point
Standoff-ratio
16. The four-layer diode is also called
Shockley diode
17. The region that corresponds to the on condition of the SCR where there is forward current from anode to cathode through the very low resistance of the SCR
Forward_ conduction region
18. The SCR can only be turned on using its _________ terminal
Gate
19. Acts as the trigger source in the LASCRs
Light
20. A thyristor that conducts when the voltage across its terminals exceeds the breakover potential
4-layer diode
21. Basic methods of for turning off an SCR
Anode current interruption and forced commutation
THYRISTORS
1. It is like the four-layer diode but with the added gate connection
SCR
2. This is the maximum continuous anode current that the device can withstand in the conduction state under specifies conditions.
Average forward current
3. What bilateral thyristor functions basically like two parallel SCRs turned in opposite directions with a common gate terminal?
Triac
4. ____________ does not belong to the thyristor family because it does not have a four-layer type of construction.
UJT
5. It can be used a trigger device for SCRs and triacs.
UJT
6. It is a type of three-terminal thyristor that is triggered into conduction when the voltage at the anode exceeds the voltage at the gate.
PUT
7. A region of forward bias in which the device has a very high forward resistance and is in the off state
Forward-blocking region
8. A method for turning-off the SCR that basically requires momentarily forcing current through the SCR in the direction opposite to the forward conduction
Forced commutation
9. The value of gate current necessary to switch the SCR from the forward-blocking region to the forward-conduction region under specified conditions.
Gate Trigger Current
10. A four-layer semiconductor device that operates essentially as does the conventional SCR except that it can also be light-triggered.
LASCR
11. Functions basically like two parallel 4- layer diodes turned in opposite directions.
Diac
12. A diac with gate terminal
Triac
13. A four-terminal thyristor that has two gate terminals that are used t trigger the device on and off
Silicon Controlled Device (SCS)
14. A type of three-terminal thyristor that is triggered into conduction when the voltage at the anode exceeds the voltage at the gate.
Programmable Unijunction Transistor (PUT)
15. The characteristic of a UJT that determines its turn-on point
Standoff-ratio
16. The four-layer diode is also called
Shockley diode
17. The region that corresponds to the on condition of the SCR where there is forward current from anode to cathode through the very low resistance of the SCR
Forward_ conduction region
18. The SCR can only be turned on using its _________ terminal
Gate
19. Acts as the trigger source in the LASCRs
Light
20. A thyristor that conducts when the voltage across its terminals exceeds the breakover potential
4-layer diode
21. Basic methods of for turning off an SCR
Anode current interruption and forced commutation
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