CHAPTER 8
FIELD –EFFECT TRANSISTORS
1. FETs are preferred device in low-voltage switching applications; while______ transistor is generally used in high-voltage switching applications.
IGBT
2. What type of JFET operates with a reverse-biased pn junction to control current in the channel?
JFET
3. An n-channel universal transfer characteristic curve is also known as
Transconductance curve
4. The change in drain current for a given change in gate-to-source voltage with the drain-to-source voltage constant
Forward transconductance
5. What is the most common type of JFET bias?
Self-bias
6. It is a method for increasing the Q-point stability of a self-biased JFET by making the drain current essentially independent of gate-to-source voltage
Current-source bias
7. What JFET bias uses a BJT as a constant-current source?
Current-source bias
8. For increased Q-point stability, the value of RS in the self-bias circuit is increased and connected to a negative supply voltage. This sometimes called
Dual-supply bias
9. VGS varies quite a bit for JFET self-bias and voltage-divider bias but ID is much more stable with
Voltage-divider bias
10. ____________ is sometimes called depletion/enhancement MOSFET.
D-MOSFET
11. LDMOSFET has a lateral channel structure and is a type of
Enhancement MOSFET
12. It is an example of the conventional E-MOSFET designed to achieve higher power capability
VMOSFET
13. Following are the three ways to bias a MOSFET except
Current-source bias
14. The insulated-gate bipolar transistor combines which two transistors that make it useful in high-voltage and high-current switching applications?
BJT and MOSFET
15. What are the three terminals of IGBT?
Gate, collector, emitter
16. In terms of switching speed, __________ switch fastest and _____________ switch slowest.
MOSFETs, BJTs
17. In a MOSFET, the process of removing or depleting the channel of charge carriers and thus decreasing the channel conductivity
Depletion
18. The ratio of change in drain current to a change in gate-to source voltage in a FET
Transconductance
19. A FET is called a ______________ because of the relationship of the drain current to the square of a term containing gate-to-source voltage
Square-law device
20. Combines features from both the MOSFET and the BJT that make it useful in high-voltage and high-current switching applications.
IGBT
21. Has a lateral channel structure and is a type of enhancement MOSFET designed for power applications.
LDMOSFET
FIELD –EFFECT TRANSISTORS
1. FETs are preferred device in low-voltage switching applications; while______ transistor is generally used in high-voltage switching applications.
IGBT
2. What type of JFET operates with a reverse-biased pn junction to control current in the channel?
JFET
3. An n-channel universal transfer characteristic curve is also known as
Transconductance curve
4. The change in drain current for a given change in gate-to-source voltage with the drain-to-source voltage constant
Forward transconductance
5. What is the most common type of JFET bias?
Self-bias
6. It is a method for increasing the Q-point stability of a self-biased JFET by making the drain current essentially independent of gate-to-source voltage
Current-source bias
7. What JFET bias uses a BJT as a constant-current source?
Current-source bias
8. For increased Q-point stability, the value of RS in the self-bias circuit is increased and connected to a negative supply voltage. This sometimes called
Dual-supply bias
9. VGS varies quite a bit for JFET self-bias and voltage-divider bias but ID is much more stable with
Voltage-divider bias
10. ____________ is sometimes called depletion/enhancement MOSFET.
D-MOSFET
11. LDMOSFET has a lateral channel structure and is a type of
Enhancement MOSFET
12. It is an example of the conventional E-MOSFET designed to achieve higher power capability
VMOSFET
13. Following are the three ways to bias a MOSFET except
Current-source bias
14. The insulated-gate bipolar transistor combines which two transistors that make it useful in high-voltage and high-current switching applications?
BJT and MOSFET
15. What are the three terminals of IGBT?
Gate, collector, emitter
16. In terms of switching speed, __________ switch fastest and _____________ switch slowest.
MOSFETs, BJTs
17. In a MOSFET, the process of removing or depleting the channel of charge carriers and thus decreasing the channel conductivity
Depletion
18. The ratio of change in drain current to a change in gate-to source voltage in a FET
Transconductance
19. A FET is called a ______________ because of the relationship of the drain current to the square of a term containing gate-to-source voltage
Square-law device
20. Combines features from both the MOSFET and the BJT that make it useful in high-voltage and high-current switching applications.
IGBT
21. Has a lateral channel structure and is a type of enhancement MOSFET designed for power applications.
LDMOSFET
0 comments:
Post a Comment